FamilyPackageCircuitVBRDSS (V)RDS(on) Max 4.5V (mOhms)RDS(on) Max 10V (mOhms)ID @ TC = 25C (A)ID @ TA = 25C (A)ID @ TA = 70C (A)Qg Typ (nC)Rth(JC) (K/W)Power Dissipation @ TA = 25C (W)Schottky VF (V)@ IFPbFPackage Class Can1K Budgetary Pricing (USD)HEXFET Power MOSFETs Discrete N-ChannelD-PakDiscrete55RDS(on) Max 2.7V (mOhms) 24.530ID @ TC = 100C (A) 18.0Qgd Typ (nC)3.12 Part StatusPbF Option AvailableSurface Mount with Leads0.414
IRFR4105Z |
RFQ for IRFR4105Z |
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| Technical/Catalog Information | IRFR4105ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 24.5 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 740pF @ 25V |
| Power - Max | 48W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR4105ZPBF IRFR4105ZPBF |
| Product | Manufacturers | Pack | D/C | |||||||||||||||||
| IRFR4105Z | - | TO-252 | 05+ |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features |
| Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax |
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
30 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
21 | |
| IDM | Pulsed Drain Current |
120 | |
| PD @TC = 25°C | Power Dissipation |
48 |
W |
| Linear Derating Factor |
0.32 |
W/°C | |
| VGS | Gate-to-Source Voltage |
±20 |
V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy |
29 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
46 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C
SupplierPost a Buying Lead |